IRFB4110PBF MOSFET N-CH 100V 120A TO220AB

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: IRFB4110PBF
• MFG.: INFINEON
• D/C: 22+
• Package: TO-220
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

IRFB4110PBF: N-Channel 100 V 120A (Tc) 370W (Tc) Through Hole TO-220AB

Mfr. Part#: IRFB4110PBF

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9620 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	370W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRFB4110

Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits


Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead Free
RoHS Compliant, Halogen-Free

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

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