BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor

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Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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  • BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
  • BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
  • BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
  • BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
  • BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
  • BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
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Basic Info.

Model NO.
BSC066N06NS
Operating Temperature
-55℃ - 125℃
Shape
Flat
Technics
Semiconductor IC
MFR.
TI
D/C
22+
Package
TDSON8
Product status
Active
Quality
Genuine New Original
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 5.00cm
Package Gross Weight
0.500kg

Product Description

description

BSC066N06NS :  Trans MOSFET N-CH 60V 64A 8-Pin TDSON EP T/R

Mfr. Part#: BSC066N06NS

Datasheet: BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor(e-mail or chat us for PDF file)

ROHS Status: BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor

Quality: 100% Original

Warranty: ONE YEAR

 

Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN
Base Product Number
BSC066
 


 

Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermal resistance
•N-channel
•QualifiedaccordingtoJEDEC1) fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21


 

 



BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor


BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor

BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor







 



BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor


BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor
 


BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor

BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor


Certificates

BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor




BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor



Product Packing details

BSC066N06NS BSC066N06NSATMA1 MOSFET N-CH 60V 64A Transistor semiconductor

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

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