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| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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Audited by an independent third-party inspection agency
BSC066N06NS : Trans MOSFET N-CH 60V 64A 8-Pin TDSON EP T/R
Mfr. Part#: BSC066N06NS
Datasheet:
(e-mail or chat us for PDF file)
ROHS Status: 
Quality: 100% Original
Warranty: ONE YEAR
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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60 V
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Current - Continuous Drain (Id) @ 25°C
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64A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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6V, 10V
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Rds On (Max) @ Id, Vgs
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6.6mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id
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3.3V @ 20µA
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Gate Charge (Qg) (Max) @ Vgs
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21 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1500 pF @ 30 V
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FET Feature
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-
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Power Dissipation (Max)
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2.5W (Ta), 46W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Grade
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-
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Qualification
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-
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TDSON-8-6
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Package / Case
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8-PowerTDFN
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Base Product Number
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BSC066
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Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermal resistance
•N-channel
•QualifiedaccordingtoJEDEC1) fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21




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