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| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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IRF9640STRLPBF : Transistor: P-MOSFET, unipolar, -200V, -6.8A, Idm: -44A, 125W
Mfr. Part#: IRF9640STRLPBF
Datasheet:
(e-mail or chat us for PDF file)
ROHS Status: 
Quality: 100% Original
Warranty: ONE YEAR
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Part Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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200 V
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Current - Continuous Drain (Id) @ 25°C
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11A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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500mOhm @ 6.6A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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44 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1200 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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3W (Ta), 125W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Grade
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-
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Qualification
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-
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Mounting Type
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Surface Mount
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Supplier Device Package
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TO-263 (D2PAK)
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Package / Case
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TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Base Product Number
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IRF9640
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Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9640L, SiHF9640L) is available for low-profile applications.




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