AONR21357 Trans MOSFET P-CH 30V 21A

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• MFG.: AOS
• D/C: 22+
• Model NO.: AONR21357
• Package: DFN8
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

AONR21357:  P-Channel 30 V 21A (Ta), 34A (Tc) 5W (Ta), 30W (Tc) Surface Mount 8-DFN-EP (3x3)

Mfr. Part#: AONR21357

Mfr.: AOS

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	2830 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN-EP (3x3)
Package / Case	8-PowerVDFN
Base Product Number	AONR213

DESCRIPTION
• Latest advanced trench technology
• Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant

APPLICATION
• Notebook AC-in load switch
• Battery protection charge/discharge

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

1. Product images are for reference only.
2. You can contact sales person to apply for a better price.
3.  For more products, Pls do not hesitate to contact our Sales team.