| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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h5an8g6ndjr-xnc : DRAM Memory
Mfr. Part#: h5an8g6ndjr-xnc
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Part number | Date Code |
| h5an8g6ndjr-xnc | 23+ |
The 8Gb DDR4 SDRAM C-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applica tions.
The chip is designed to comply with the following key DDR4 SDRAM fea tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
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