| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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SST39SF010A-70-4C-NHE : FLASH Memory IC 1Mbit Parallel 70 ns 32-PLCC (11.43x13.97)
Mfr. Part#: SST39SF010A-70-4C-NHE
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Series
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SST39 MPF™
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Packaging
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Tube
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Part Status
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Active
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Memory Type
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Non-Volatile
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Memory Format
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FLASH
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Technology
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FLASH
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Memory Size
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1Mbit
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Memory Organization
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128K x 8
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Memory Interface
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Parallel
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Write Cycle Time - Word, Page
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20µs
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Access Time
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70 ns
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Voltage - Supply
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4.5V ~ 5.5V
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Operating Temperature
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0°C ~ 70°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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32-LCC (J-Lead)
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Supplier Device Package
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32-PLCC (11.43x13.97)
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Base Product Number
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SST39SF010A
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The SST39SF010A/020A/040 devices are CMOS Multi-Purpose Flash (MPF) manufactured with Microchip's proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5V-5.5V power supply and conform to JEDEC® standard pin assignments for x8 memories. Featuring a high-performance Byte Program, the SST39SF010A/020A/040 devices provide a maximum Byte Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent writes, they have on-chip hardware and software data protection schemes. The SST39SF010A/020A/040 devices provide superior reliability, being designed, manufactured and tested for a wide spectrum of applications. These devices are suited for applications that require convenient and economical updating of program, configuration or data memory. For all system applications, they significantly improve performance and reliability while lowering power consumption. They inherently use less energy during Erase and Program times than alternative Flash technologies. The total energy consumed is a function of the applied voltage, current and time of application. Since, for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative Flash technologies. These devices also improve flexibility while lowering the cost for program, data and configuration storage applications.
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