IPT015N10N5 MOSFET N-CH 100V 300A 8HSOF

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 22+
• Model NO.: IPT015N10N5
• Package: HSOF-8
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

IPT015N10N5: N-Channel 100 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1

Mfr. Part#: IPT015N10N5

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

 

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	211 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN
Base Product Number	IPT015

 

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

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