BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor

Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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Registered Capital
100000 RMB
Plant Area
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  • BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
  • BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
  • BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
  • BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
  • BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
  • BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
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Basic Info.

Model NO.
BSZ042N06NS
Operating Temperature
-55℃ - 125℃
Shape
Flat
Technics
Semiconductor IC
MFG.
PULSE
D/C
22+
Package
TSDSON-8
Quality
Genuine New Original
Product status
Active
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 10.00cm
Package Gross Weight
1.000kg

Product Description

description

BSZ042N06NS MOSFETs N-Ch 60V 40A TDSON-8

Mfr. Part#: BSZ042N06NS

Datasheet: BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor(e-mail or chat us for PDF file)

ROHS Status: BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor

Quality: 100% Original

Warranty: ONE YEAR
 

 
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 98 A
Rds On - Drain-Source Resistance: 4.9 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Qg - Gate Charge: 27 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 69 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 5
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 6 ns
Forward Transconductance - Min: 27 S
Height: 1.1 mm
Length: 3.3 mm
Product Type: MOSFETs
Rise Time: 7 ns
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 10 ns
Width: 3.3 mm
Part # Aliases: BSZ042N06NS SP000917418
Unit Weight: 0.003966 oz
 


Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection







BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor


BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor


BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor







 



BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor


BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor
 


BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor

BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor


Certificates

BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor

BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor



Product Packing details

BSZ042N06NS BSZ042N06NSATMA1 Trans MOSFET N-CH 60V 40A unipolar transistor

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
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  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

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