| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
|
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IPB042N10N3GATMA1: N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Mfr. Part#: IPB042N10N3GATMA1
Mfr.: INFINEON
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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100A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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6V, 10V
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Rds On (Max) @ Id, Vgs
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4.2mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 150µA
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Gate Charge (Qg) (Max) @ Vgs
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117 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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8410 pF @ 50 V
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FET Feature
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-
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Power Dissipation (Max)
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214W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TO263-3
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Package / Case
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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Product Number
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IPB042
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Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21
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