IPB042N10N3G MOSFET N-CH 100V 100A D2PAK

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 22+
• Model NO.: IPB042N10N3G
• Package: TO-263
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

IPB042N10N3GATMA1: N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3

Mfr. Part#: IPB042N10N3GATMA1

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	IPB042

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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