| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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AOD4185: P-Channel 40 V 40A (Tc) 2.5W (Ta), 62.5W (Tc) Surface Mount TO-252 (DPAK)
Mfr. Part#: AOD4185
Mfr.: AOS
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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40 V
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Current - Continuous Drain (Id) @ 25°C
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40A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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15mOhm @ 20A, 10V
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Vgs(th) (Max) @ Id
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3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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55 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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2550 pF @ 20 V
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FET Feature
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-
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Power Dissipation (Max)
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2.5W (Ta), 62.5W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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TO-252 (DPAK)
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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AOD418
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The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free
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