• CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS
  • CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS
  • CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS
  • CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS
  • CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS
  • CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS

CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS

shape: SMD
Conductive Type: Unipolar Integrated Circuit
Integration: LSI
Technics: Thick Film IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Customization:
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Basic Info.

Model NO.
CD4093BM96
MFG.
TI
D/C
17+
Package
SOIC-14
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

CD4093BM96: NAND Gate 4-Element 2-IN CMOS 14-Pin SOIC T/R

Package: SOIC-14

Mfr. Part#: CD4093BM96

Mfr.:TI

Datasheet: CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS(e-mail or chat us for PDF file)

ROHS Status: CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS

Quality: 100% Original

Warranty: 180 days
 

CD4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and negative-going signals. The difference between the positive voltage (VP) and the negative voltage (VN) is defined as hysteresis voltage (VH) (see Fig. 2).

The CD4093B types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-line plastic packages (E suffix), 14-lead small-outline packages (M, MT, M96, and NSR suffixes), and 14-lead thin shrink small-outline packages (PW and PWR suffixes).

 

Key Features

  • Schmitt-trigger action on each input with no external components
  • Hysteresis voltage typically 0.9 V at VDD = 5 V and 2.3 V at VDD = 10 V
  • Noise immunity greater than 50%
  • No limit on input rise and fall times
  • Standardized, symmetrical output characteristics
  • 100% tested for quiescent current at 20 V
  • Maximum input current of 1 µA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C
  • 5-V, 10-V, and 15-V parametric ratings
  • Meets all requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of 'B' Series CMOS Devices

Company Product Line


CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS







 


CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS


CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS

CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS


CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS

CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS


Certificates

CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS

Product Packing details

CD4093BM96 electronic ICS NAND Gate 4-Element 2-IN CMOS



Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   

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Registered Capital
100000 RMB
Plant Area
<100 square meters