IR2110PBF Half-Bridge Gate Driver IC Non-Inverting 14-DIP

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 22+
• Model NO.: IR2110PBF
• Package: DIP14
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

IR2110PBF: IC GATE DRVR HALF-BRIDGE 14DIP

Mfr. Part#: IR2110PBF

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

Package	Tube
Product Status	Not For New Designs
Programmable	Not Verified
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	3.3V ~ 20V
Logic Voltage - VIL, VIH	6V, 9.5V
Current - Peak Output (Source, Sink)	2A, 2A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	500 V
Rise / Fall Time (Typ)	25ns, 17ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	14-DIP
Base Product Number	IR2110

 

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts

 

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• Located in Shenzhen, the electronic market center of China.
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