| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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IR2110PBF: IC GATE DRVR HALF-BRIDGE 14DIP
Mfr. Part#: IR2110PBF
Mfr.: INFINEON
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Package
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Tube
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Product Status
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Not For New Designs
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Programmable
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Not Verified
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Driven Configuration
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Half-Bridge
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Channel Type
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Independent
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Number of Drivers
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2
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Gate Type
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IGBT, N-Channel MOSFET
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Voltage - Supply
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3.3V ~ 20V
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Logic Voltage - VIL, VIH
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6V, 9.5V
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Current - Peak Output (Source, Sink)
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2A, 2A
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Input Type
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Non-Inverting
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High Side Voltage - Max (Bootstrap)
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500 V
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Rise / Fall Time (Typ)
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25ns, 17ns
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
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Through Hole
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Package / Case
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14-DIP (0.300", 7.62mm)
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Supplier Device Package
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14-DIP
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Base Product Number
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IR2110
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The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts
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