• IRF540PBF MOSFET 100V N-CH HEXFET
  • IRF540PBF MOSFET 100V N-CH HEXFET
  • IRF540PBF MOSFET 100V N-CH HEXFET
  • IRF540PBF MOSFET 100V N-CH HEXFET
  • IRF540PBF MOSFET 100V N-CH HEXFET
  • IRF540PBF MOSFET 100V N-CH HEXFET

IRF540PBF MOSFET 100V N-CH HEXFET

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
MFG.: VISHAY
D/C: 20+
Samples:
US$ 4/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
IRF540PBF
Package
TO-220
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

IRF540PBF Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB

Mfr. Part#: IRF540PBF

Mfr.: VISHAY

Datasheet: IRF540PBF MOSFET 100V N-CH HEXFET(e-mail or chat us for PDF file)

ROHS Status: IRF540PBF MOSFET 100V N-CH HEXFET

Quality: 100% Original

Warranty: ONE YEAR
 

Product Attribute Attribute Value Search Similar
Manufacturer: Vishay  
Product Category: MOSFET  
RoHS:  Details  
Technology: Si  
Mounting Style: Through Hole  
Package / Case: TO-220AB-3  
Transistor Polarity: N-Channel  
Number of Channels: 1 Channel  
Vds - Drain-Source Breakdown Voltage: 100 V  
Id - Continuous Drain Current: 28 A  
Rds On - Drain-Source Resistance: 77 mOhms  
Vgs - Gate-Source Voltage: - 20 V, + 20 V  
Vgs th - Gate-Source Threshold Voltage: 4 V  
Qg - Gate Charge: 72 nC  
Minimum Operating Temperature: - 55 C  
Maximum Operating Temperature: + 175 C  
Pd - Power Dissipation: 150 W  
Channel Mode: Enhancement  
Packaging: Tube  
Brand: Vishay Semiconductors  
Configuration: Single  
Fall Time: 43 ns  
Height: 15.49 mm  
Length: 10.41 mm  
Product Type: MOSFET  
Rise Time: 44 ns  
Series: IRF  
Factory Pack Quantity: 1000  
Subcategory: MOSFETs  
Transistor Type: 1 N-Channel  
Typical Turn-Off Delay Time: 53 ns  
Typical Turn-On Delay Time: 11 ns  
Width: 4.7 mm  
Part # Aliases: IRF540PBF-BE3  
Unit Weight: 0.068784 oz
 
 
 

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Key Features

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • 175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC


 
 



IRF540PBF MOSFET 100V N-CH HEXFET


IRF540PBF MOSFET 100V N-CH HEXFET


IRF540PBF MOSFET 100V N-CH HEXFET

IRF540PBF MOSFET 100V N-CH HEXFET

IRF540PBF MOSFET 100V N-CH HEXFET

IRF540PBF MOSFET 100V N-CH HEXFET
IRF540PBF MOSFET 100V N-CH HEXFET

IRF540PBF MOSFET 100V N-CH HEXFET



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

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Diamond Member Since 2018

Suppliers with verified business licenses

Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters