| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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FDV301N: N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Mfr. Part#: FDV301N
Mfr.: ONSEMI
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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25 V
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Current - Continuous Drain (Id) @ 25°C
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220mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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2.7V, 4.5V
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Rds On (Max) @ Id, Vgs
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4Ohm @ 400mA, 4.5V
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Vgs(th) (Max) @ Id
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1.06V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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0.7 nC @ 4.5 V
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Vgs (Max)
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±8V
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Input Capacitance (Ciss) (Max) @ Vds
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9.5 pF @ 10 V
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FET Feature
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-
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Power Dissipation (Max)
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350mW (Ta)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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SOT-23-3
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Package / Case
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TO-236-3, SC-59, SOT-23-3
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Base Product Number
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FDV301
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This N−Channel logic level enhancement mode field effect transistor is produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.
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