Customization: | Available |
---|---|
Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
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IRF630NPBF: N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Mfr. Part#: IRF630NPBF
Mfr.: INFINEON
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Package
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Tube
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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200 V
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Current - Continuous Drain (Id) @ 25°C
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9.3A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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300mOhm @ 5.4A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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35 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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575 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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82W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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TO-220-3
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Base Product Number
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IRF630
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Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application.
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