• MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW
  • MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW
  • MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW
  • MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW
  • MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW
  • MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
US$ 0.08/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
MMBT3904LT1G
MFG.
ONSEMI
D/C
22+
Package
SOT-23
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

MMBT3904LT1G:  Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236)

Mfr. Part#: MMBT3904LT1G

Mfr.: ONSEMI

Datasheet: MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW(e-mail or chat us for PDF file)

ROHS Status: MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

Quality: 100% Original

Warranty: ONE YEAR
 

Product Status
Active
 
Transistor Type
NPN
 
Current - Collector (Ic) (Max)
200 mA
 
Voltage - Collector Emitter Breakdown (Max)
40 V
 
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
 
Current - Collector Cutoff (Max)
-
 
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
 
Power - Max
300 mW
 
Frequency - Transition
300MHz
 
Operating Temperature
-55°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Package / Case
TO-236-3, SC-59, SOT-23-3
 
Supplier Device Package
SOT-23-3 (TO-236)
 
Base Product Number
MMBT3904



Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable












MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW


MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW


MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW
MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW

MMBT3904LT1G Transistor GP BJT NPN 40V 0.2A 300mW



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

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Registered Capital
100000 RMB
Plant Area
<100 square meters