Customization: | Available |
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Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
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CUS10S30,H3F: Diode 30 V 1A Surface Mount USC
Mfr. Part#: CUS10S30,H3F
Mfr.: FTDI
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Product Status
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Active
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Technology
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Schottky
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Voltage - DC Reverse (Vr) (Max)
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30 V
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Current - Average Rectified (Io)
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1A
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Voltage - Forward (Vf) (Max) @ If
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230 mV @ 100 mA
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Speed
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Fast Recovery =< 500ns, > 200mA (Io)
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Current - Reverse Leakage @ Vr
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500 µA @ 30 V
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Capacitance @ Vr, F
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135pF @ 0V, 1MHz
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Mounting Type
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Surface Mount
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Package / Case
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SC-76, SOD-323
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Supplier Device Package
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USC
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Operating Temperature - Junction
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125°C (Max)
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Base Product Number
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CUS10S30
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Applications • High-Speed Switching
Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design
Notice: