| shape: | hqfp64 |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
| Technics: | Semiconductor IC |
| Application: | Standard Generalized Integrated Circuit |
| Type: | Digital / Analog IC |
| Samples: |
|---|
| Customization: |
|---|
Suppliers with verified business licenses
Audited Supplier MB85RC64TAPNF-G-BDERE1: FRAM (Ferroelectric RAM) Memory IC 64Kbit I²C 3.4 MHz 130 ns 8-SOP
Mfr. Part#: MB85RC64TAPNF-G-BDERE1
Mfr.: FUJITSU
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
|
Memory Type
|
Non-Volatile
|
|
|
Memory Format
|
FRAM
|
|
|
Technology
|
FRAM (Ferroelectric RAM)
|
|
|
Memory Size
|
64Kbit
|
|
|
Memory Organization
|
8K x 8
|
|
|
Memory Interface
|
I²C
|
|
|
Clock Frequency
|
3.4 MHz
|
|
|
Write Cycle Time - Word, Page
|
-
|
|
|
Access Time
|
130 ns
|
|
|
Voltage - Supply
|
1.8V ~ 3.6V
|
|
|
Operating Temperature
|
-40°C ~ 85°C (TA)
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Package / Case
|
8-SOIC (0.154", 3.90mm Width)
|
|
|
Supplier Device Package
|
8-SOP
|
|
|
Base Product Number
|
MB85RC64
|
The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 1013 cycles, significantly outperforming Flash memory and E2PROM in the number. The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.
Notice:
Suppliers with verified business licenses
Audited Supplier 
){kind=link}
){kind=link}