IC GATE DRVR IGBT/MOSFET ZXGD3009E6TA

• shape: SMD
• Conductive Type: Unipolar Integrated Circuit
• Integration: LSI
• Technics: Thick Film IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: ZXGD3009E6TA
• MFG.: DIODES
• D/C: 17+
• Package: SOT23-6
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

ZXGD3009E6TA: MOSFET DRVR 3A 1-OUT High Speed Non-Inv6-Pin SOT-26 T/R 

Package: SOT23-6

Mfr. Part#: ZXGD3009E6TA

Mfr.: DIODES

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Product:	MOSFET Gate Drivers
Mounting Style:	SMD/SMT
Package / Case:	SOT-26-6
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	1 A
Supply Voltage - Max:	40 V
Configuration:	Non-Inverting
Rise Time:	290 ns
Fall Time:	235 ns
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	ZXGD3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Maximum Turn-Off Delay Time:	38 ns
Maximum Turn-On Delay Time:	42 ns
Operating Supply Current:	20 nA
Output Voltage:	7 V
Pd - Power Dissipation:	200 mW
Product Type:	Gate Drivers
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	ZXGD3009
Unit Weight:	0.000212 oz

ZXGD3009E6 is a high-speed non-inverting single gate driver for switching MOSFETs. It can transfer up to 2A peak source/sink current into the gate for effective charging and discharging the capacitive load.This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1A into the low gate impedance with just 10mA input from a controller. Also, the turn-on and turn-off switching behavior of the MOSFET can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction problems can be reduced.

Key Features

• High-gain buffer with typically 1Aoutput from 10mA input
• Emitter-follower that is rugged to latch-up / shoot-through issues
• Wide supply voltage to minimize on-losses
• Separate source and sink outputs for independent control of MOSFET turn-on and turn-off times
• Optimized pin-out to simplify PCB layout and reduce parasitic trace inductances
• Near-zero quiescent supply current
• Totally Lead-Free & Fully RoHS compliant
• Halogen and Antimony Free. "Green" Device

Company Product Line

 

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Product Packing details

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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