| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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NCE01P18K : NCE P-Channel Enhancement Mode Power MOSFET
Mfr. Part#: NCE01P18K
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@10V,16A |
| Power Dissipation (Pd) | 70W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSPChannel |
The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
Application
Power management in notebook computer
Portable equipment and battery powered systems
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