| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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FDS4435BZ: P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Mfr. Part#: FDS4435BZ
Mfr.: ONSEMI
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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30 V
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Current - Continuous Drain (Id) @ 25°C
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8.8A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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20mOhm @ 8.8A, 10V
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Vgs(th) (Max) @ Id
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3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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40 nC @ 10 V
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Vgs (Max)
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±25V
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Input Capacitance (Ciss) (Max) @ Vds
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1845 pF @ 15 V
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FET Feature
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-
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Power Dissipation (Max)
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2.5W (Ta)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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8-SOIC
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Base Product Number
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FDS4435
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This P−Channel MOSFET is produced using ON Semiconductor's advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
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