• SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI
  • SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI
  • SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI
  • SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI
  • SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI
  • SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI

SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI

shape: SMD
Conductive Type: Unipolar Integrated Circuit
Integration: MSI
Technics: Thin Film IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Customization:
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Basic Info.

Model NO.
IS61LV25616AL-10TLI
MFG.
ISSI
D/C
17+
Package
TSOP(II)-44
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

IS61LV25616AL-10TLI: SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II - Bulk

Package: TSOP(II)-44

Mfr. Part#: IS61LV25616AL-10TLI

Mfr.: ISSI

Datasheet: SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI(e-mail or chat us for PDF file)

ROHS Status: SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI

Quality: 100% Original

Warranty: 180 days

 

Product Status
Active
 
Memory Type
Volatile
 
Memory Format
SRAM
 
Technology
SRAM - Asynchronous
 
Memory Size
4Mbit
 
Memory Organization
256K x 16
 
Memory Interface
Parallel
 
Write Cycle Time - Word, Page
10ns
 
Access Time
10 ns
 
Voltage - Supply
3.135V ~ 3.6V
 
Operating Temperature
-40°C ~ 85°C (TA)
 
Mounting Type
Surface Mount
 
Package / Case
44-TSOP (0.400", 10.16mm Width)
 
Supplier Device Package
44-TSOP II
 
Base Product Number
IS61LV25616

 

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bitstatic RAM organized as 262,144 words by 16 bits. It isfabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovativecircuit design techniques, yields high-performance andlowpower consumption devices. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The IS61LV25616AL is packaged in the JEDEC standard44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFPand 48-pin Mini BGA (8mm x 10mm)

Key Features

  • High-speed access time:
    • 10, 12 ns
  • CMOS low power operation
  • Low stand-by power:
    • Less than 5 mA (typ.) CMOS stand-by
  • TTL compatible interface levels
  • Single 3.3V power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • Lead-free available

Company Product Line


SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI







 


SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI


SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI

SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI


SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI

SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI


Certificates

SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI

SRAM Chip Async Single 3.3v IS61LV25616AL-10TLI



Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   
 

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters