Customization: | Available |
---|---|
Conductive Type: | Unipolar Integrated Circuit |
Integration: | MSI |
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IS61LV25616AL-10TLI: SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II - Bulk
Package: TSOP(II)-44
Mfr. Part#: IS61LV25616AL-10TLI
Mfr.: ISSI
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: 180 days
Product Status
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Active
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Memory Type
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Volatile
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Memory Format
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SRAM
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Technology
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SRAM - Asynchronous
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Memory Size
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4Mbit
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Memory Organization
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256K x 16
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Memory Interface
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Parallel
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Write Cycle Time - Word, Page
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10ns
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Access Time
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10 ns
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Voltage - Supply
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3.135V ~ 3.6V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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44-TSOP (0.400", 10.16mm Width)
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Supplier Device Package
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44-TSOP II
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Base Product Number
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IS61LV25616
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The ISSI IS61LV25616AL is a high-speed, 4,194,304-bitstatic RAM organized as 262,144 words by 16 bits. It isfabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovativecircuit design techniques, yields high-performance andlowpower consumption devices. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The IS61LV25616AL is packaged in the JEDEC standard44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFPand 48-pin Mini BGA (8mm x 10mm)
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