IRLML6401TRPBF Single P-Channel TRANS MOSFET

• shape: SMD
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: IRLML6401TRPBF
• MFG.: IR
• D/C: 17+
• Package: SOT-23
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

IRLML6401TRPBF:  4.3 A, 12 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET 

Package: SOT-23

Mfr. Part#: IRLML6401TRPBF

Mfr.: IR

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days

 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Key Features

• Ultra Low On-Resistance
• P-Channel MOSFET
• SOT-23 Footprint
• Low Profile (<1.1mm)
• Available in Tape and Reel
• Fast Switching
• 1.8V Gate Rated
• Lead-Free
• RoHS Compliant, Halogen-Free

 

Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	4.3 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.3 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Height:	1.1 mm
Length:	2.9 mm
Product Type:	MOSFET
Factory Pack Quantity:	3000
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Width:	1.3 mm
Part # Aliases:	IRLML6401TRPBF SP001577044
Unit Weight:	0.000282 oz

 

Company Product Line

 

Certificates




 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

1. Product images are for reference only.
2. You can contact sales person to apply for a better price.
3.  For more products, Pls do not hesitate to contact our Sales team.