Customization: | Available |
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Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
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MB85RS1MTPNF-G-JNERE1: FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOP
Mfr. Part#: MB85RS1MTPNF-G-JNERE1
Mfr.: FUJITSU
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Memory Type
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Non-Volatile
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Memory Format
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FRAM
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Technology
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FRAM (Ferroelectric RAM)
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Memory Size
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1Mbit
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Memory Organization
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128K x 8
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Memory Interface
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SPI
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Clock Frequency
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40 MHz
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Write Cycle Time - Word, Page
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-
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Voltage - Supply
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1.8V ~ 3.6V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
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8-SOP
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Base Product Number
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MB85RS1
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MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS1MT adopts the Serial Peripheral Interface (SPI). The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes no wait time.
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