MB85RS1MTPNF-G-JNERE1 FRAM 1MBIT SPI 40MHZ 8SOP IC

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• Application: Standard Generalized Integrated Circuit
• Type: Digital / Analog IC
• Model NO.: MB85RS1MTPNF-G-JNERE1
• MFG.: FUJITSU
• D/C: 22+
• Package: SOIC8
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

MB85RS1MTPNF-G-JNERE1: FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOP

Mfr. Part#: MB85RS1MTPNF-G-JNERE1

Mfr.: FUJITSU

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

Memory Type	Non-Volatile
Memory Format	FRAM
Technology	FRAM (Ferroelectric RAM)
Memory Size	1Mbit
Memory Organization	128K x 8
Memory Interface	SPI
Clock Frequency	40 MHz
Write Cycle Time - Word, Page	-
Voltage - Supply	1.8V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	MB85RS1

MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS1MT adopts the Serial Peripheral Interface (SPI). The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes no wait time.

 

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• Located in Shenzhen, the electronic market center of China.
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