Customization: | Available |
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Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
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IRFR5305TRPBF: Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R
Mfr. Part#: IRFR5305TRPBF
Mfr.: INFINEON
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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55 V
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Current - Continuous Drain (Id) @ 25°C
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31A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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65mOhm @ 16A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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63 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1200 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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110W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D-Pak
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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IRFR5305
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
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