| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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MB85RC256VPNF-G-JNERE1: FRAM (Ferroelectric RAM) Memory IC 256Kbit I²C 1 MHz 550 ns 8-SOP
Mfr. Part#: MB85RC256VPNF-G-JNERE1
Mfr.: FUJITSU
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Memory Type
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Non-Volatile
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Memory Format
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FRAM
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Technology
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FRAM (Ferroelectric RAM)
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Memory Size
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256Kbit
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Memory Organization
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32K x 8
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Memory Interface
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I²C
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Clock Frequency
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1 MHz
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Write Cycle Time - Word, Page
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-
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Access Time
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550 ns
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Voltage - Supply
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2.7V ~ 5.5V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
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8-SOP
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Base Product Number
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MB85RC256
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The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.
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