• IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC
  • IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC
  • IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC
  • IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC
  • IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC
  • IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
US$ 0.25/Piece 1 Piece(Min.Order)
| Request Sample
Customization:
Diamond Member Since 2018

Suppliers with verified business licenses

Trading Company

Basic Info.

Model NO.
IRF7341TRPBF
MFG.
INFINEON
D/C
22+
Package
SOIC8
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Product Description

Description

IRF7341TRPBF: Mosfet Array 55V 4.7A 2W Surface Mount 8-SO

Mfr. Part#: IRF7341TRPBF

Mfr.: INFINEON

Datasheet: IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC(e-mail or chat us for PDF file)

ROHS Status: IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

Quality: 100% Original

Warranty: ONE YEAR


 

Product Status
Active
 
Technology
MOSFET (Metal Oxide)
 
Configuration
2 N-Channel (Dual)
 
FET Feature
Logic Level Gate
 
Drain to Source Voltage (Vdss)
55V
 
Current - Continuous Drain (Id) @ 25°C
4.7A
 
Rds On (Max) @ Id, Vgs
50mOhm @ 4.7A, 10V
 
Vgs(th) (Max) @ Id
1V @ 250µA
 
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
 
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 25V
 
Power - Max
2W
 
Operating Temperature
-55°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Package / Case
8-SOIC (0.154", 3.90mm Width)
 
Supplier Device Package
8-SO
 
Base Product Number
IRF734



Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application











IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC


IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC


IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC
IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341TRPBF MOSFET 2N-CH 55V 4.7A 8-SOIC



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now

You Might Also Like

Diamond Member Since 2018

Suppliers with verified business licenses

Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters