| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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IRF7341TRPBF: Mosfet Array 55V 4.7A 2W Surface Mount 8-SO
Mfr. Part#: IRF7341TRPBF
Mfr.: INFINEON
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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Technology
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MOSFET (Metal Oxide)
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Configuration
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2 N-Channel (Dual)
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FET Feature
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Logic Level Gate
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Drain to Source Voltage (Vdss)
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55V
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Current - Continuous Drain (Id) @ 25°C
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4.7A
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Rds On (Max) @ Id, Vgs
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50mOhm @ 4.7A, 10V
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Vgs(th) (Max) @ Id
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1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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36nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
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740pF @ 25V
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Power - Max
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2W
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
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8-SO
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Base Product Number
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IRF734
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application
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