| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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IRFP1405PBF : Trans MOSFET N-CH Si 55V 160A 3-Pin(3+Tab) TO-247AC
Mfr. Part#: IRFP1405PBF
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Id - Continuous Drain Current: | 160 A |
| Rds On - Drain-Source Resistance: | 5.3 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 120 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 310 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Configuration: | Single |
| Height: | 20.7 mm |
| Length: | 15.87 mm |
| Product Type: | MOSFETs |
| Rise Time: | 160 ns |
| Factory Pack Quantity: | 400 |
| Subcategory: | Transistors |
| Transistor Type: | 1 N-Channel |
| Width: | 5.31 mm |
| Unit Weight: | 0.211644 oz |
This Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G
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