W9864G6KH-6 DRAM Chip SDRAM 64Mbit

• Customization: Available
• Conductive Type: Unipolar Integrated Circuit
• Integration: MSI
• Model NO.: W9864G6KH-6
• Technics: Thin Film IC
• MFG.: WINBOND
• D/C: 17+
• Package: TSOP(II)-54
• Quality: Genuine New Original
• shape: SMD
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

W9864G6KH-6: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II

Package: TSOP(II)-54

Mfr. Part#: W9864G6KH-6

Mfr.: WINBOND

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Type:	SDRAM
Mounting Style:	SMD/SMT
Package / Case:	TSOP-54
Data Bus Width:	16 bit
Organization:	4 M x 16
Memory Size:	64 Mbit
Maximum Clock Frequency:	166 MHz
Access Time:	6 ns
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	3 V
Supply Current - Max:	50 mA
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C
Series:	W9864G6KH
Brand:	Winbond
Moisture Sensitive:	Yes
Product Type:	DRAM
Factory Pack Quantity:	540
Subcategory:	Memory & Data Storage
Unit Weight:	0.323628 oz

 

The W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per second. For different application, W9864G6KH is sorted into the following speed grades: -5, -6, -6I and -7. The -5 parts can run up to 200MHz/CL3. The -6 and -6I parts can run up to 166MHz/CL3 (the -6I industrial grade which is guaranteed to support -40°C to 85°C) The -7 parts can run up to 143MHz/CL3 and with TRP = 18nS.

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle.

 

Key Features

• 3.3V ± 0.3V for -5, -6 and -6I speed grades power supply
• 2.7V to 3.6V for -7 speed grades power supply
• 1, 048, 576 words x 4 banks x 16 bits organization
• Self Refresh current: Standard and Low Power
• CAS Latency: 2 & 3
• Burst Length: 1, 2, 4, 8 and full page
• Sequential and Interleave Burst
• Byte data controlled by LDQM, UDQM
• Auto-precharge and controlled precharge
• Burst read, single write operation
• 4K refresh cycles/64mS
• Interface: LVTTL
• Packaged in TSOP II 54-pin 400 mil using Lead free materials with RoHS complain

Company Product Line

 

Certificates



Product Packing details

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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