IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic

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Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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  • IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
  • IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
  • IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
  • IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
  • IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
  • IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
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Basic Info.

Model NO.
IRF7530TRPBF
Operating Temperature
-55℃ - 125℃
Shape
Flat
Technics
Semiconductor IC
MFR.
TI
D/C
22+
Package
SO-8
Product status
Active
Quality
Genuine New Original
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 5.00cm
Package Gross Weight
0.500kg

Product Description

description

IRF7530TRPBF  MOSFET 2N-CH 20V 5.4A MICRO8

Mfr. Part#: IRF7530TRPBF

Datasheet: IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic(e-mail or chat us for PDF file)

ROHS Status: IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic

Quality: 100% Original

Warranty: ONE YEAR

 

Part Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.4A
Rds On (Max) @ Id, Vgs
30mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1310pF @ 15V
Power - Max
1.3W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package
Micro8™
Base Product Number
IRF7530



New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.





 
 



IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic


IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic

IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic







 



IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic


IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic
 


IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic

IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic


Certificates

IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic




IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic



Product Packing details

IRF7530TRPBF MOSFET 2N-CH 20V 5.4A IRF7530 Transistor IRF7530PBF ic

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

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