• Transistor Signal MOSFET 60V 2N7002LT1G
  • Transistor Signal MOSFET 60V 2N7002LT1G
  • Transistor Signal MOSFET 60V 2N7002LT1G
  • Transistor Signal MOSFET 60V 2N7002LT1G
  • Transistor Signal MOSFET 60V 2N7002LT1G
  • Transistor Signal MOSFET 60V 2N7002LT1G

Transistor Signal MOSFET 60V 2N7002LT1G

shape: SMD
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
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Basic Info.

Model NO.
2N7002LT1G
MFG.
ONSEMI
D/C
17+
Package
SOT-23
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

2N7002LT1G:  N-Channel 60 V 7.5 Ohm 225 mW Surface Mount Small Signal MOSFET - SOT-23-3

Package: SOT-23

Mfr. Part#: 2N7002LT1G

Mfr.: ONSEMI

Datasheet: Transistor Signal MOSFET 60V 2N7002LT1G(e-mail or chat us for PDF file)

ROHS Status: Transistor Signal MOSFET 60V 2N7002LT1G

Quality: 100% Original

Warranty: 180 days

 

Technology: Si  
Mounting Style: SMD/SMT  
Package / Case: SOT-23-3  
Transistor Polarity: N-Channel  
Number of Channels: 1 Channel  
Vds - Drain-Source Breakdown Voltage: 60 V  
Id - Continuous Drain Current: 115 mA  
Rds On - Drain-Source Resistance: 7.5 Ohms  
Vgs - Gate-Source Voltage: - 20 V, + 20 V  
Vgs th - Gate-Source Threshold Voltage: 1 V  
Qg - Gate Charge: -  
Minimum Operating Temperature: - 55 C  
Maximum Operating Temperature: + 150 C  
Pd - Power Dissipation: 300 mW  
Channel Mode: Enhancement  
Series: 2N7002L  
Packaging: Reel  
Packaging: Cut Tape  
Packaging: MouseReel  
Brand: onsemi  
Configuration: Single  
Forward Transconductance - Min: 80 mS  
Height: 0.94 mm  
Length: 2.9 mm  
Product: MOSFET Small Signal  
Product Type: MOSFET  
Factory Pack Quantity: 3000  
Subcategory: MOSFETs  
Transistor Type: 1 N-Channel  
Type: MOSFET  
Typical Turn-Off Delay Time: 40 ns  
Typical Turn-On Delay Time: 20 ns  
Width: 1.3 mm  
Unit Weight: 0.000282 oz

These N-Channel enhancement mode field effect transistors are produced using , high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Features

  • AEC−Q101 Qualified and PPAP Capable
  • Pb−Free Devices are available

 




Transistor Signal MOSFET 60V 2N7002LT1G







 


Transistor Signal MOSFET 60V 2N7002LT1G


Transistor Signal MOSFET 60V 2N7002LT1G

Transistor Signal MOSFET 60V 2N7002LT1G

Transistor Signal MOSFET 60V 2N7002LT1G

Transistor Signal MOSFET 60V 2N7002LT1G
Transistor Signal MOSFET 60V 2N7002LT1G

Transistor Signal MOSFET 60V 2N7002LT1G

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   
 

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Registered Capital
100000 RMB
Plant Area
<100 square meters