IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor

Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: GSI
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Number of Employees
3
Year of Establishment
2018-08-13
  • IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
  • IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
  • IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
  • IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
  • IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
  • IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
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Basic Info.

Model NO.
IRF2807PBF
Operating Temperature
-55℃ - 125℃
Shape
Flat
Technics
Semiconductor IC
MFR.
ADI
D/C
23+
Package
TO-220
Product status
Active
Quality
Genuine New Original
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 5.00cm
Package Gross Weight
0.500kg

Product Description

description

IRF2807PBF N-Channel 75 V 82A (Tc) 230W (Tc) Through Hole TO-220AB

Mfr. Part#: IRF2807PBF

Datasheet: IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor(e-mail or chat us for PDF file)

ROHS Status: IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor

Quality: 100% Original

Warranty: ONE YEAR
 

 
Series
HEXFET®
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3820 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF2807


 
 

Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


 

 



IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor


IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor

IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor







 



IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor


IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor
 


IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor

IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor


Certificates

IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor




IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor



Product Packing details

IRF2807PBF IRF2807 Trans power MOSFET N-CH Si 75V 82A transistor

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

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