DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW

Product Details
Customization: Available
Conductive Type: Bipolar Integrated Circuit
Integration: SSI
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  • DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW
  • DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW
  • DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW
  • DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW
  • DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW
  • DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW
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Basic Info.

Model NO.
DTC143ZET1G
Technics
Semiconductor IC
MFG.
ON
Quality
Genuine New Original
Package
SC75
D/C
22+
shape
SMD
Transport Package
Box
Specification
integrated circuit
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Packaging & Delivery

Package Size
20.00cm * 20.00cm * 10.00cm
Package Gross Weight
2.000kg
Lead Time
15 days (1 - 354000 Pieces)
To be negotiated ( > 354000 Pieces)

Product Description

Description

DTC143ZET1G :  Transistor Digital BJT NPN 50V 100mA 3-Pin SOT-416 T/R

Package: SC-75

Mfr. Part#: DTC143ZET1G

Mfr.: ON

Datasheet: DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW(e-mail or chat us for PDF file)

ROHS Status: DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW

Quality: 100% Original

Warranty: 180 days
 

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Key Features

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
 
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 200mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SC-75, SOT-416

 

Company Product Line


DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW







 


DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW


DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW

DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW


DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW

DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW


Certificates

DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW

Product Packing details

DTC143ZET1G DTC143ZE Bipolar Transistor Trans Digital BJT NPN 50V 100mA 300mW


 

 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

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