• BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR
  • BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR
  • BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR
  • BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR
  • BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR
  • BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
US$ 0.25/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
BSC070N10NS3G
MFG.
INFINEON
D/C
22+
Package
TDSON-8
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Product Description

Description

BSC070N10NS3G: N-Channel 100 V 57A (Tc) 200W (Tc) Through Hole TO-220AB

Mfr. Part#: BSC070N10NS3G

Mfr.: INFINEON

Datasheet: BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR(e-mail or chat us for PDF file)

ROHS Status: BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

Quality: 100% Original

Warranty: ONE YEAR

 

Product Status
Active
 
FET Type
N-Channel
 
Technology
MOSFET (Metal Oxide)
 
Drain to Source Voltage (Vdss)
100 V
 
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
 
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
 
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
 
Vgs(th) (Max) @ Id
3.5V @ 75µA
 
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
 
Vgs (Max)
±20V
 
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 50 V
 
FET Feature
-
 
Power Dissipation (Max)
114W (Tc)
 
Operating Temperature
-55°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Supplier Device Package
PG-TDSON-8-1
 
Package / Case
8-PowerTDFN
 
Base Product Number
BSC070



 

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.












BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR


BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR


BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR
BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR

BSC070N10NS3G N-Channel 100V 7mOhm TRANSISROR



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 
 

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Diamond Member Since 2018

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters