IRF7480MTRPBF IRF7480M MOSFET 40V Single N-Channel HEXFET Power MOSFET

• Customization: Available
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Model NO.: IRF7480MTRPBF
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 20+
• Package: DIRECTFET
• Quality: Genuine New Original
• shape: hqfp64
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

IRF7480MTRPBF : Trans MOSFET N-CH Si 40V 330A 10-Pin Direct-FET ME T/R

Mfr. Part#: IRF7480MTRPBF

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

 

Product Attribute	Attribute Value	Search Similar
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DirectFET-ME
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	217 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	123 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	StrongIRFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon / IR
Configuration:	Single
Fall Time:	58 ns
Forward Transconductance - Min:	370 S
Height:	0.7 mm
Length:	6.35 mm
Product Type:	MOSFET
Rise Time:	70 ns
Factory Pack Quantity:	4800
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	21 ns
Width:	5.05 mm
Part # Aliases:	IRF7480MTRPBF SP001566252
Unit Weight:	0.017637 oz

 

 

Trans MOSFET N-CH 40V 217A 10-Pin Direct-FET ME T/R

Key Features

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
• Fully Characterized Capacitance and Avalanche SOA
• Enhanced body diode dv/dt and di/dt Capability
• Lead-Free, RoHS Compliant

Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters

Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
 Lead-Free, RoHS Compliant

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

1. Product images are for reference only.
2. You can contact sales person to apply for a better price.
3.  For more products, Pls do not hesitate to contact our Sales team.