• IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC
  • IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC
  • IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC
  • IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC
  • IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC
  • IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

shape: hqfp64
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
Application: Standard Generalized Integrated Circuit
Type: Digital / Analog IC
Samples:
US$ 0.25/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
IRF7416TRPBF
MFG.
INFINEON
D/C
22+
Package
SOIC8
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Product Description

Description

IRF7416TRPBF: Trans MOSFET P-CH 30V 10A 8-Pin SOIC N T/R

Mfr. Part#: IRF7416TRPBF

Mfr.: INFINEON

Datasheet: IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC(e-mail or chat us for PDF file)

ROHS Status: IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

Quality: 100% Original

Warranty: ONE YEAR

Product Status
Active
 
FET Type
P-Channel
 
Technology
MOSFET (Metal Oxide)
 
Drain to Source Voltage (Vdss)
30 V
 
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
 
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
 
Rds On (Max) @ Id, Vgs
20mOhm @ 5.6A, 10V
 
Vgs(th) (Max) @ Id
1V @ 250µA
 
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
 
Vgs (Max)
±20V
 
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
 
FET Feature
-
 
Power Dissipation (Max)
2.5W (Ta)
 
Operating Temperature
-55°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Supplier Device Package
8-SO
 
Package / Case
8-SOIC (0.154", 3.90mm Width)
 
Base Product Number
IRF7416


 

 

APPLICATION
Application • Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits

 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
 












IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC


IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC


IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC
IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC

IRF7416TRPBF TRANSISTOR MOSFET P-CH 30V 10A 8SOIC



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 
 

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters