| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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TPH1R403NL: N-Channel 30 V 60A (Ta) 1.6W (Ta), 64W (Tc) Surface Mount 8-SOP Advance (5x5)
Mfr. Part#: TPH1R403NL
Mfr.: TOSHIBA
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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30 V
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Current - Continuous Drain (Id) @ 25°C
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60A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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1.4mOhm @ 30A, 10V
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Vgs(th) (Max) @ Id
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2.3V @ 500µA
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Gate Charge (Qg) (Max) @ Vgs
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46 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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4400 pF @ 15 V
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FET Feature
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-
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Power Dissipation (Max)
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1.6W (Ta), 64W (Tc)
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Operating Temperature
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150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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8-SOP Advance (5x5)
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Package / Case
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8-PowerVDFN
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Base Product Number
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TPH1R403
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Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators
Features (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 m Ω (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, I D = 0.5 mA)
Notice:
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