| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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K4RAH165VB-BCQK : 16Gbit SDRAM DDR5 2400MHz DDR SDRAM
Mfr. Part#: K4RAH165VB-BCQK
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Memory Size | 16Gbit |
| Voltage - Supply | 1.067V~1.166V |
| Memory Format | SDRAM DDR5 |
| Clock Frequency | 2400MHz |
| Operating Temperature | 0ºC~+85ºC |
The GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. GDDR6 devices contain the following number of bits: 8Gb has 8,589,934,592 bits 12Gb has 12,884,901,888 bits 16Gb has 17,179,869,184 bits 24Gb has 25,769,803,776 bits 32Gb has 34,359,738,368 bits The GDDR6 SGRAM's high-speed interface is optimized for point-to-point connections to a host controller. On-die termination (ODT) is provided for all high-speed interface signals to eliminate the need for termination resistors in the system. GDDR6 uses a 16n prefetch architecture and a DDR interface to achieve high-speed operation. The device's architecture consists of two 16 bit wide fully independent channels. GDDR6 operates from a differential clock CK_t and CK_c. CK is common to both channels. Command and Address (CA) are registered at every rising edge of CK and every falling edge of CK. There are both single cycle and multi cycle commands. See command truth table for details. GDDR6 uses a free running differential forwarded clock (WCK_t/WCK_c) with both input and output data registered and driven respectively at both edges of the forwarded WCK. See Clocking section for details. Read and write accesses to GDDR6 are burst oriented; accesses start at a selected location and consists of a total of sixteen data words. Accesses begin with the registration of an Activate command, which is then followed by a Read, Write (WOM) or masked Write (WDM, WSM) command. The row and bank address to be accessed is registered coincident with the Activate command. The address bits registered coincident with the Read, Write or masked Write command are used to select the bank and the starting column location for the burst access. This specification includes all features and functionality required for GDDR6 SGRAM devices. In many cases the GDDR6 specification describes the behavior of a single channel.
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