| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
|
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|
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SI2301CDS-T1-GE3 : P-Channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
Mfr. Part#: SI2301CDS-T1-GE3
Mfr.: VISHAY
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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20 V
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Current - Continuous Drain (Id) @ 25°C
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3.1A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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2.5V, 4.5V
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Rds On (Max) @ Id, Vgs
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112mOhm @ 2.8A, 4.5V
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Vgs(th) (Max) @ Id
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1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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10 nC @ 4.5 V
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Vgs (Max)
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±8V
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Input Capacitance (Ciss) (Max) @ Vds
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405 pF @ 10 V
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FET Feature
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-
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Power Dissipation (Max)
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860mW (Ta), 1.6W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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SOT-23-3 (TO-236)
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Package / Case
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TO-236-3, SC-59, SOT-23-3
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Base Product Number
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SI2301
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Notice:
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