IRS2153DSTRPBF IRS2153 IRS2153D Gate Drivers Self-Osc Half Bridge MOSFET driver IC

• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Mounting Type: SMT
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: IRS2153DSTRPBF
• Operating Temperature: -40℃ - 85℃
• Shape: Flat
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 22+
• Package: SOIC8
• Quality: Genuine New Original
• Product status: Active
• Transport Package: Box
• Specification: electronic components
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS
• Package Size: 20.00cm * 20.00cm * 10.00cm
• Package Gross Weight: 1.000kg

Product Description

description

IRS2153DSTRPBF :  IC GATE DRVR HALF-BRIDGE 8SOIC

Mfr. Part#: IRS2153DSTRPBF

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR
 

  

Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	260 mA
Supply Voltage - Min:	10.1 V
Supply Voltage - Max:	16.8 V
Rise Time:	120 ns
Fall Time:	50 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Features:	Synchronous
Height:	1.5 mm
Length:	5 mm
Logic Type:	CMOS
Maximum Clock Frequency:	100 kHz
Moisture Sensitive:	Yes
Operating Supply Current:	5 mA
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Width:	4 mm
Unit Weight:	0.019048 oz

 

 

The IRS2153(1)D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.






 

 

 

 

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Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

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