| Customization: | Available |
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| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | GSI |
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Si2333DDS-T1-GE3 : Power MOSFET, P Channel, 12 V, 6 A, 28 Milliohms, SOT-23, 3 Pins, Surface Mount
Mfr. Part#: Si2333DDS-T1-GE3
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Id - Continuous Drain Current: | 6 A |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 9 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 1.7 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Vishay Semiconductors |
| Configuration: | Single |
| Fall Time: | 20 ns |
| Height: | 1.45 mm |
| Length: | 2.9 mm |
| Product Type: | MOSFETs |
| Rise Time: | 24 ns |
| Series: | SI2 |
| Factory Pack Quantity: | 3000 |
| Subcategory: | Transistors |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 45 ns |
| Typical Turn-On Delay Time: | 26 ns |
| Width: | 1.6 mm |
| Part # Aliases: | SI2333DDS-T1-BE3 |
| Unit Weight: | 0.000282 oz |
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