MMBT5551LT1G NPN transistor trans MMBT5551

Product Details
Customization: Available
Conductive Type: Unipolar Integrated Circuit
Integration: ULSI
Diamond Member Since 2018

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Registered Capital
100000 RMB
Plant Area
<100 square meters
  • MMBT5551LT1G NPN transistor trans MMBT5551
  • MMBT5551LT1G NPN transistor trans MMBT5551
  • MMBT5551LT1G NPN transistor trans MMBT5551
  • MMBT5551LT1G NPN transistor trans MMBT5551
  • MMBT5551LT1G NPN transistor trans MMBT5551
  • MMBT5551LT1G NPN transistor trans MMBT5551
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Basic Info.

Model NO.
MMBT5551LT1G
Technics
Thin Film IC
MFG.
ON
D/C
17+
Package
SOT-23
Quality
Genuine New Original
shape
SMD
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

MMBT5551LT1G: Trans GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R 

Package: SOT-23

Mfr. Part#: MMBT5551LT1G

Mfr.: ON
Datasheet: MMBT5551LT1G NPN transistor trans MMBT5551(e-mail or chat us for PDF file)

ROHS Status: MMBT5551LT1G NPN transistor trans MMBT5551

Quality: 100% Original

Warranty: 180 days
 

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Key Features

  • Collector − Emitter Breakdown Voltage 160 V
  • Miniature SOT-23 Surface Mount Package Saves Board Space
  • >
  • Pb−Free Devices are available
 
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 225mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
 

Company Product Line


MMBT5551LT1G NPN transistor trans MMBT5551







 


MMBT5551LT1G NPN transistor trans MMBT5551


MMBT5551LT1G NPN transistor trans MMBT5551

MMBT5551LT1G NPN transistor trans MMBT5551


MMBT5551LT1G NPN transistor trans MMBT5551

MMBT5551LT1G NPN transistor trans MMBT5551


Certificates

MMBT5551LT1G NPN transistor trans MMBT5551

MMBT5551LT1G NPN transistor trans MMBT5551



Why choosing us
  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   

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