Customization: | Available |
---|---|
Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
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SPW47N60C3FKSA1: N-Channel 650 V 47A (Tc) 415W (Tc) Through Hole PG-TO247-3-1
Mfr. Part#: SPW47N60C3FKSA1
Mfr.: INFINEON
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Package
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Tube
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|
Product Status
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Active
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FET Type
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N-Channel
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|
Technology
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MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
650 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
47A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
70mOhm @ 30A, 10V
|
|
Vgs(th) (Max) @ Id
|
3.9V @ 2.7mA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
320 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
6800 pF @ 25 V
|
|
FET Feature
|
-
|
|
Power Dissipation (Max)
|
415W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
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|
Supplier Device Package
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PG-TO247-3-1
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|
Package / Case
|
TO-247-3
|
|
Base Product Number
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SPW47N60
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Notice: