Customization: | Available |
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Conductive Type: | Unipolar Integrated Circuit |
Integration: | LSI |
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IRLML6402PBF : Single P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3
Mfr. Part#: IRLML6402PBF
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Part Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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20 V
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Current - Continuous Drain (Id) @ 25°C
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3.7A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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2.5V, 4.5V
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Rds On (Max) @ Id, Vgs
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65mOhm @ 3.7A, 4.5V
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Vgs(th) (Max) @ Id
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1.2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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12 nC @ 5 V
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Vgs (Max)
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±12V
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Input Capacitance (Ciss) (Max) @ Vds
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633 pF @ 10 V
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FET Feature
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-
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Power Dissipation (Max)
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1.3W (Ta)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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Micro3™/SOT-23
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Package / Case
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TO-236-3, SC-59, SOT-23-3
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Base Product Number
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IRLML6402
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These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
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