IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23

Product Details
Customization: Available
Conductive Type: Unipolar Integrated Circuit
Integration: LSI
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  • IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
  • IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
  • IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
  • IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
  • IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
  • IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
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Basic Info.

Model NO.
IRLML6402PBF
Technics
Thick Film IC
MFG.
INFINEON
D/C
22+
Package
SOT23
Quality
Genuine New Original
shape
Round
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

description

IRLML6402PBFSingle P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3

Mfr. Part#: IRLML6402PBF

Datasheet: IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23(e-mail or chat us for PDF file)

ROHS Status: IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23

Quality: 100% Original

Warranty: ONE YEAR
 


 

Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
633 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro3™/SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
IRLML6402




These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. 

 


IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23


IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23








 


IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23







 



IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23


IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23
 


IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23

IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23


Certificates

IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23

IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23



Product Packing details

IRLML6402PBF IRLML6402TRPBF transistor MOSFET P-CH 20V 3.7A SOT23

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
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  • 24 Hours service 

 

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