IC DRAM SDRAM 256MBIT W9825G6KH-6

• Customization: Available
• Conductive Type: Unipolar Integrated Circuit
• Integration: MSI
• Model NO.: W9825G6KH-6
• Technics: Thin Film IC
• MFG.: WINBOND
• D/C: 17+
• Package: TSOP(II)-54
• Quality: Genuine New Original
• shape: SMD
• Transport Package: Box
• Origin: China
• HS Code: 8542390000
• Production Capacity: 1000000PCS

Product Description

Description

W9825G6KH-6: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II

Package: TSOP(II)-54

Mfr. Part#: W9825G6KH-6

Mfr.: WINBOND

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: 180 days
 

Product Status	Active
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM
Memory Size	256Mbit
Memory Organization	16M x 16
Memory Interface	Parallel
Clock Frequency	166 MHz
Write Cycle Time - Word, Page	-
Access Time	5 ns
Voltage - Supply	3V ~ 3.6V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package	54-TSOP II
Base Product Number	W9825G6

 

The W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9825G6KH is sorted into the following speed grades: -5, -5I, -6, -6I, -6L -75 and 75L. The -5/-5I grade parts are compliant to the 200 MHz/CL3 specification (the -5I industrial grade which is guaranteed to support - 40°C ≤ TA ≤ 85°C). The -6/-6I/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade which is guaranteed to support - 40°C ≤ TA ≤ 85°C). The -75/75L is compliant to the 133MHz/CL3 specification. The -6L and 75L parts support self refresh current IDD6 Max. 1.5 mA.

Accesses to the SDRAM are burst oriented. Consecutive memory location is one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the pre-charging time.

 

Key Features

• 3.3V ± 0.3V Power Supply
• Up to 200 MHz Clock Frequency
• 4,194,304 Words x 4 Banks x 16 Bits Organization
• Self Refresh Mode: Standard and Low Power
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and Full Page
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Power Down Mode
• Auto-precharge and Controlled Precharge
• 8K Refresh Cycles/64 mS
• Interface: LVTTL
• Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant

Company Product Line

 

Certificates




 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

1. Product images are for reference only.
2. You can contact sales person to apply for a better price.
3.  For more products, Pls do not hesitate to contact our Sales team.