• 1EBN1001AE IGBT MOSFET Gate Driver Booster
  • 1EBN1001AE IGBT MOSFET Gate Driver Booster
  • 1EBN1001AE IGBT MOSFET Gate Driver Booster
  • 1EBN1001AE IGBT MOSFET Gate Driver Booster
  • 1EBN1001AE IGBT MOSFET Gate Driver Booster
  • 1EBN1001AE IGBT MOSFET Gate Driver Booster

1EBN1001AE IGBT MOSFET Gate Driver Booster

shape: SMD
Conductive Type: Unipolar Integrated Circuit
Integration: ULSI
Technics: Thin Film IC
Application: Standard Generalized Integrated Circuit
Type: Analog IC
Customization:
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Basic Info.

Model NO.
1EBN1001AE
MFG.
INFINEON
D/C
17+
Package
SOIC-14
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

1EBN1001AE: MOSFET DRVR 15A 1-OUT Hi Side Inv/Non-Inv 14-Pin DSO T/R

Package:SOIC-14

Mfr. Part#: 1EBN1001AE

Mfr.: INFINEON
Datasheet: 1EBN1001AE IGBT MOSFET Gate Driver Booster(e-mail or chat us for PDF file)

ROHS Status: 1EBN1001AE IGBT MOSFET Gate Driver Booster

Quality: 100% Original

Warranty: 180 days

 

Product Status
Active
 
Driven Configuration
High-Side or Low-Side
 
Channel Type
Single
 
Number of Drivers
1
 
Gate Type
IGBT, N-Channel, P-Channel MOSFET
 
Voltage - Supply
13V ~ 18V
 
Logic Voltage - VIL, VIH
1.5V, 3.5V
 
Current - Peak Output (Source, Sink)
-
 
Input Type
-
 
High Side Voltage - Max (Bootstrap)
1200 V
 
Rise / Fall Time (Typ)
50ns, 90ns
 
Operating Temperature
-40°C ~ 150°C (TJ)
 
Mounting Type
Surface Mount
 
Package / Case
14-SOIC (0.154", 3.90mm Width) Exposed Pad
 
Supplier Device Package
PG-DSO-14-43
 
Base Product Number
1EBN1001

 

EiceDRIVER™ Boost - Isolated single channel booster for automotive applications

Key Features

  • Single Channel IGBT/MOSFET Gate Driver Booster.
  • Suitable for IGBT classes up to 650V/800A and 1200V/400A.
  • Peak current up to IPK = +/- 15A (for 1.5μs).
  • Continuous current up to ICONT= 2 x 0.75 Arms at 10 kHz (CLOAD=300nF).
  • Low propagation delay and minimal PWM distortion.
  • Separate turn-on and turn-off signals pathes.
  • Support for Active Clamping with very fast reaction time.
  • Active Clamping Disable and ASC Input signals.
  • Support for negative turn-off bias.
  • Optimal support of EiceSIL functions.
  • 14-pin PG-DSO-14 exposed pad green package.
  • Operational ambient temperature range from -40°C to 125°C.
  • Automotive qualified (as per AEC Q100).
  • Suitable for systems up to ASIL D requirements (as per IEC 61508 and ISO 26262).

Company Product Line


1EBN1001AE IGBT MOSFET Gate Driver Booster







 


1EBN1001AE IGBT MOSFET Gate Driver Booster


1EBN1001AE IGBT MOSFET Gate Driver Booster

1EBN1001AE IGBT MOSFET Gate Driver Booster


1EBN1001AE IGBT MOSFET Gate Driver Booster

1EBN1001AE IGBT MOSFET Gate Driver Booster


Certificates

1EBN1001AE IGBT MOSFET Gate Driver Booster

1EBN1001AE IGBT MOSFET Gate Driver Booster

Why choosing us
  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team.   
 

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters