BSC067N06LS3G MOSFET N-CH 60V 15A/50A TDSON

• shape: hqfp64
• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• MFG.: INFINEON
• D/C: 22+
• Model NO.: BSC067N06LS3G
• Package: TDSON-8
• Quality: Genuine New Original
• Transport Package: Box
• Origin: China
• HS Code: 8542399000
• Production Capacity: 1000000PCS

Product Description

Description

BSC067N06LS3GATMA1: N-Channel 60 V 15A (Ta), 50A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5

Mfr. Part#: BSC067N06LS3GATMA1

Mfr.: INFINEON

Datasheet: (e-mail or chat us for PDF file)

ROHS Status: 

Quality: 100% Original

Warranty: ONE YEAR

 

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5100 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-5
Package / Case	8-PowerTDFN
Base Product Number	BSC067

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

 

Why choosing us

• Located in Shenzhen, the electronic market center of China.
• 100% guarantee components quality: Genuine Original.
• Sufficient stock on your urgent demand.
• Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
• Faster shipment: In stock components can ship the same day .
• 24 Hours service 

 

Notice:

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