Customization: | Available |
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Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
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IRF3205STRLPBF: N-Channel 55 V 110A (Tc) 200W (Tc) Surface Mount D2PAK
Mfr. Part#: IRF3205STRLPBF
Mfr.: INFINEON
Datasheet: (e-mail or chat us for PDF file)
ROHS Status:
Quality: 100% Original
Warranty: ONE YEAR
Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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55 V
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Current - Continuous Drain (Id) @ 25°C
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110A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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8mOhm @ 62A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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146 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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3247 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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200W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D2PAK
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Package / Case
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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Product Number
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IRF3205
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Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.
Notice: