• 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101
  • 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101
  • 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101
  • 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101
  • 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101
  • 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

shape: Flat
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
MFG.: TOSHIBA
D/C: 22+
Samples:
US$ 0.25/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
2SC2712-GR,LF(T
Package
SOT23
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542399000
Production Capacity
1000000PCS

Product Description

Description

 2SC2712-GR,LF(T :  Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

Mfr. Part#:  2SC2712-GR,LF(T

Mfr.: TOSHIBA

Datasheet: 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101(e-mail or chat us for PDF file)

ROHS Status: 2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

Quality: 100% Original

Warranty: ONE YEAR

 

Product Status
Active
 
Transistor Type
NPN
 
Current - Collector (Ic) (Max)
150 mA
 
Voltage - Collector Emitter Breakdown (Max)
50 V
 
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
 
Current - Collector Cutoff (Max)
100nA (ICBO)
 
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA, 6V
 
Power - Max
150 mW
 
Frequency - Transition
80MHz
 
Operating Temperature
125°C (TJ)
 
Mounting Type
Surface Mount
 
Package / Case
TO-236-3, SC-59, SOT-23-3
 
Supplier Device Package
S-Mini
 
Base Product Number
2SC2712


Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers

Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: I C = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (I C = 0.1 mA)/hFE (I C = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SA1162






2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101


2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101


2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101
2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101

2SC2712-GR,LF(T Transistor GP BJT NPN 50V 0.15A 150mW Automotive AEC-Q101



 

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

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Registered Capital
100000 RMB
Plant Area
<100 square meters